XD1008-BD Datasheet, PDF (1/9 Pages) Mimix Broadband – 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier

XD1008-BD
Distributed Amplifier
30 kHz - 40 GHz
Features
 15 dB Gain
 22.5 dBm P1dB at 22 GHz
 4.5 dB Noise Figure at 26 GHz
 Unconditional Stability over Temperature Range
 100% On-Wafer RF, DC and Output Power
Testing
 100% Visual Inspection to MIL-STD-883 Method
2010
 RoHS* Compliant and 260°C Reflow Compatible
Description
The XD1008-BD is a 30 kHz - 40 GHz GaAs MMIC
distributed amplifier that has a gain of 15 dB with a
4.5 dB noise figure at 26 GHz. This MMIC uses
M/A-COM Technology Solutions’ GaAs pHEMT
device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
microwave, millimeter-wave, military, wideband and
instrumentation applications.
Ordering Information
Part Number
Package
XD1008-BD-000V
“V” - vacuum release gel
paks
XD1008-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings¹
Parameter
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg1)
Gate Current (Ig1)
Gate Bias Voltage (Vg2)
Gate Current (Ig2)
CW Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Min.
-9.5 V
-38 mA
-3.5 V
-20 mA
-65 ºC
-55 ºC
Max.
+10.0 V
340 mA
+1 mA
+4.0 V
17 dBm
+165 ºC
+150 ºC
(1) Absolute maximum ratings for continuous operation unless otherwise
noted.
Bias Settings
Parameter
Drain Current (Id), V=7 V, VG1=-2.5 V*, VG2=open circuit
Drain Current (Id), V=4 V, VG1=-2.5 V*, VG2=open circuit
Units
mA
mA
Min.
9.0
DC
Typ.
-
2.0
Max.
Function
Drain Voltage (Vd)
V
- 15.0
Supply drain current to device
Gate Bias (Vg1)
V 10.0 13.5
Adjusted to set drain current
Gate Bias (Vg2)
V
- +3.0
Adjusted for gain control
*approximate
1
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