XD1001-BD_15 Datasheet, PDF (1/9 Pages) M/A-COM Technology Solutions, Inc. – Distributed Amplifier

XD1001-BD
Distributed Amplifier
18-50 GHz
Features
 Ultra Wide Band Driver Amplifier
 Fiber Optic Modulator Driver
 17.0 dB Small Signal Gain
 5.0 dB Noise Figure
 30 dB Gain Control
 +15.0 dBm P1dB Compression Point
 100% On-Wafer RF, DC and Output Power
Testing
 100% Visual Inspection to MIL-STD-883 Method
2010
 RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0
dB with a noise figure of 5.0 dB across the band.
The device also includes 30.0 dB gain control and a
+15 dBm P1dB compression point. This MMIC uses
M/A-COM Tech’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach
process. This device is well suited for microwave,
millimeter-wave and wideband military applications.
Ordering Information
Part Number
Package
XD1001-BD-000V
“V” - vacuum release gel
paks
XD1001-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)¹
+6.0 VDC
220 mA
+0.3 V
+15 dBm
-65 ºC to +165 ºC
-55 ºC to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is recommended to
keep channel temperature as low as possible for maximum life.
1
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