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UF2840P_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
UF2840P
RF Power MOSFET Transistor
40W, 100-500 MHz, 28V
Features
 N-channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 Common source configuration
 Lower noise floor
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
VDS
VGS
IDS
PD
TJ
TSTG
θJC
65
20
4*
116
200
-55 to 150
1.5
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
100
6.0-j20.0
300
2.5-j5.5
ZLOAD (Ω)
25.0j27.0
13.0+j13.0
500
4.0+j3.0
12.0j5.0
VDD=28V, IDQ=500 mA, POUT =40.0 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BVDSS
65
Drain-Source Leakage Current
IDSS
-
Gate-Source Leakage Current
IGSS
-
Gate Threshold Voltage
VGS(TH)
2.0
Forward Transconductance
GM
.5
Input Capacitance
CISS
-
Output Capacitance
Reverse Capacitance
Power Gain
COSS
-
CRSS
-
GP
10
Drain Efficiency
ŋD
50
Load Mismatch Tolerance
VSWR-T -
*Per side
Max
-
1.0
1.0
6.0
-
45
30
8
-
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
VGS = 0.0 V , IDS = 5.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 100.0 mA
VDS = 10.0 V , IDS 1.0 A , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
1
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