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UF2840G_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
UF2840G
RF Power MOSFET Transistor
40W, 100-500 MHz, 28V
Features
 N-channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than competitive devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
4*
A
Power Dissipation
PD
116
W
Junction Temperature
TJ
200
°C
Storage Temperature
TSTG
-55 to 150
°C
Thermal Resistance
θJC
1.52
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
100
6.0-j20.0
12.0+j6.0
200
3.5-j11.5
16.5+j19.5
300
2.5-j5.5
13.0j13.0
400
3.0+j0.0
12.0+j9.0
500
4.0+j3.0
+12.0j5.0
VDD=28V, IDQ=500 mA, POUT =40.0 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BVDSS
65
-
Drain-Source Leakage Current
IDSS
-
1.0
Gate-Source Leakage Current
IGSS
-
1.0
Gate Threshold Voltage
VGS(TH)
2.0
6.0
Forward Transconductance
GM
.500 -
Input Capacitance
CISS
-
45
Output Capacitance
Reverse Capacitance
Power Gain
COSS
CRSS
GP
-
30
-
8
10
-
Drain Efficiency
ŋD
50
-
Load Mismatch Tolerance
VSWR-T - 30:1
*Per side
Package Outline
Rev. V1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
VGS = 0.0 V , IDS = 5.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 100.0 mA
VDS = 10.0 V , IDS 1.0 A , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz
1
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