UF2840G Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 4OW, 28V 100 - 500 MHz

UF2840G
RF Power MOSFET Transistor
40W, 100-500 MHz, 28V
Features
• N-channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than competitive devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V_DS
65
V
Gate-Source Voltage
V_GS
20
V
Drain-Source Current
I_DS
4*
A
Power Dissipation
P_D
116
W
Junction Temperature
T_J
200
°C
Storage Temperature
T_STG
-55 to 150
°C
Thermal Resistance
θ_JC
1.52
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
100
6.0-j20.0
12.0+j6.0
200
3.5-j11.5
16.5+j19.5
300
2.5-j5.5
13.0j13.0
400
3.0+j0.0
12.0+j9.0
500
4.0+j3.0
+12.0j5.0
V_DD=28V, I_DQ=500 mA, P_OUT =40.0 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
1.0
Gate-Source Leakage Current
I_GSS
-
1.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
.500 -
Input Capacitance
C_ISS
-
45
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
30
-
8
Power Gain
G_P
10
-
Drain Efficiency
ŋ_D
50
-
Load Mismatch Tolerance
VSWR-T - 30:1
*Per side
Package Outline
M/A-COM Products
Released; RoHS Compliant
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 5.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 100.0 mA
V_DS = 10.0 V , I_DS 1.0 A , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 500.0 mA, P_OUT = 40.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 500.0 mA, P_OUT = 40.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 500.0 mA, P_OUT = 40.0 W F =500 MHz
1
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