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UF2820R_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
UF2820R
RF Power MOSFET Transistor
20W, 100-500 MHz, 28V
Features
 N-channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than competitive devices
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
4
A
Power Dissipation
PD
61
W
Junction Temperature
Storage Temperature
Thermal Resistance
TJ
TSTG
θJC
200
-55 to 150
2.86
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
100
8.0-j16.0
300
5.5-j8.0
ZLOAD (Ω)
12.0+j6.0
9.3+j6.0
500
4.0-j3.8
4.5+j4.5
VDD=28V, IDQ=100 mA, POUT =20.0 W
ZIN is the series equivalent input impedance of the device from
gate to source.
ZLOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(TH)
Forward Transconductance
GM
Input Capacitance
CISS
Output Capacitance
Reverse Capacitance
Power Gain
COSS
CRSS
GP
Drain Efficiency
ŋD
Load Mismatch Tolerance
VSWR-T
Min
65
-
-
2.0
.500
-
-
-
10
50
-
Max
-
1.0
1.0
6.0
-
45
30
8
-
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
VGS = 0.0 V , IDS = 5.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 100.0 mA
VDS = 10.0 V , IDS 1000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz
VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz
VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz
1
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