UF2820P Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz

UF2820P
RF Power MOSFET Transistor
20W, 100-500 MHz, 28V
Features
• N-channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• Common source configuration
• Lower noise floor
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V_DS
65
V
Gate-Source Voltage
V_GS
20
V
Drain-Source Current
I_DS
2.8
A
Power Dissipation
P_D
53
W
Junction Temperature
T_J
200
°C
Storage Temperature
T_STG
-55 to 150
°C
Thermal Resistance
θ_JC
3.3
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
100
9.5-j60.0
Z_LOAD (Ω)
4.0+j68.0
300
5.0-j35.0
40.0+j48.0
500
2.0-j22.0
36.0+j34.0
V_DD=28V, I_DQ=200 mA, P_OUT =20.0 W
Z_IN is the series equivalent input impedance of the device from
gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
Gate-Source Leakage Current
I_DSS
-
2.0
I_GSS
-
2.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
.160 -
Input Capacitance
C_ISS
-
14
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
10
-
4.8
Power Gain
G_P
10
-
Drain Efficiency
ŋ_D
50
-
Load Mismatch Tolerance
VSWR-T - 20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 4.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 200.0 mA
V_DS = 10.0 V , I_DS 200.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 200.0 mA, P_OUT = 20.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 200.0 mA, P_OUT = 20.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 200.0 mA, P_OUT = 20.0 W F =500 MHz
1
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