UF2815B_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

UF2815B
RF Power MOSFET Transistor
15W, 100-500 MHz, 28V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 Common source configuration
 Lower noise floor
 RoHS Compliant
 100 MHz to 500 MHz operation
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V_DS
65
V
Gate-Source Voltage
V_GS
20
V
Drain-Source Current
I_DS
Power Dissipation
P_D
4.2
A
48.6
W
Junction Temperature
Storage Temperature
Thermal Resistance
T_J
T_STG
θ_JC
200
-55 to 150
3.6
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
100
6.4-j25.0
300
6.5-j12.0
Z_LOAD (Ω)
22.0+j16.0
15.0+j14.0
500
1.7-j10.5
8.0=j10.5
V_DD=28V, I_DQ=150 mA, P_OUT =15.0 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV_DSS
I_DSS
65
-
-
3.0
Gate-Source Leakage Current
I_GSS
-
3.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
.240 -
Input Capacitance
C_ISS
-
21
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
15
-
7.2
Power Gain
Drain Efficiency
Load Mismatch Tolerance
G_P
10
-
ŋ_D
50
-
VSWR-T - 20:1
Package Outline
Rev. V1
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
MILLIMETERS
MIN
MAX
20.70
20.96
14.35
14.61
14.73
15.24
6.27
6.53
6.22
6.48
1.14
1.40
1.52
1.78
2.92
3.17
1.40
1.65
2.03
2.39
3.66
4.32
.10
.15
INCHES
MIN MAX
.815 .825
.565 .575
.580 .575
.247 .257
.245 .255
.045 .055
.060 .070
.115 .125
.055 .065
.080 .094
.144 .170
.004 .006
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 6.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 30.0 mA
V_DS = 10.0 V , I_DS 300.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 150.0 mA, P_OUT = 15.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 150.0 mA, P_OUT = 15.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 150.0 mA, P_OUT = 15.0 W F =500 MHz
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support