UF2815B Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 15W, 28V 100-500MHz

UF2815B
RF Power MOSFET Transistor
15W, 100-500 MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• Common source configuration
• Lower noise floor
• RoHS Compliant
• 100 MHz to 500 MHz operation
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V_DS
65
V
Gate-Source Voltage
V_GS
20
V
Drain-Source Current
I_DS
4.2
A
Power Dissipation
P_D
48.6
W
Junction Temperature
T_J
200
°C
Storage Temperature
T_STG
-55 to 150
°C
Thermal Resistance
θ_JC
3.6
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
100
6.4-j25.0
Z_LOAD (Ω)
22.0+j16.0
300
6.5-j12.0
15.0+j14.0
500
1.7-j10.5
8.0=j10.5
V_DD=28V, I_DQ=150 mA, P_OUT =15.0 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV_DSS
I_DSS
65
-
-
3.0
Gate-Source Leakage Current
Gate Threshold Voltage
I_GSS
-
3.0
V_GS(TH)
2.0
6.0
Forward Transconductance
Input Capacitance
G_M
.240 -
C_ISS
-
21
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
15
-
7.2
Power Gain
G_P
10
-
Drain Efficiency
Load Mismatch Tolerance
ŋ_D
50
-
VSWR-T - 20:1
M/A-COM Products
Released - Ver 08.07
Package Outline
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
MILLIMETERS
MIN
MAX
20.70
20.96
14.35
14.61
14.73
15.24
6.27
6.53
6.22
6.48
1.14
1.40
1.52
1.78
2.92
3.17
1.40
1.65
2.03
2.39
3.66
4.32
.10
.15
INCHES
MIN MAX
.815 .825
.565 .575
.580 .575
.247 .257
.245 .255
.045 .055
.060 .070
.115 .125
.055 .065
.080 .094
.144 .170
.004 .006
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 6.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 30.0 mA
V_DS = 10.0 V , I_DS 300.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 150.0 mA, P_OUT = 15.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 150.0 mA, P_OUT = 15.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 150.0 mA, P_OUT = 15.0 W F =500 MHz
1
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