UF28150J_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

UF28150J
RF Power MOSFET Transistor
150 W, 100 - 500 MHz, 28 V
Features
 DMOS structure
 Lower capacitance for broadband operation
 Common source configuration
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS^{1, 2, 3}
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V_DS
V_GS
I_DS
P_D
T_J
T_STG
Θ_JC
Rating
65
20
16*
389
200
-65 to +150
0.45
Units
V
V
A
W
°C
°C
°C/W
1. Exceeding any one or combination of these limits may cause permanent damage
to this device.
2. M/A-COM does not recommend sustained operation near these maximum limits.
3. At 25°C Tcase, unless noted.
ELECTRICAL SPECIFICATIONS: 25°C
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
V_GS = 0.0 V, I_DS = 20.0 mA*
V_DS = 28.0 V, V_GS = 0.0V*
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Notes:
* Per side
** At all phase angles
V_GS = 20 V, V_DS = 0.0 V*
V_DS = 10.0 V, I_DS = 400.0 mA*
V_DS = 10.0 V, I_DS = 4000.0 mA, ∆V_GS = 1.0 V, 80µs pulse*
V_DS = 28.0V, F = 1.0 MHz*
V_DS = 28.0V, F = 1.0 MHz*
V_DS = 28.0V, F = 1.0 MHz*
V_DD = 28.0 V, I_DQ = 400.0 mA, P_OUT = 150.0 W, F = 500 MHz
V_DD = 28.0 V, I_DQ = 400.0 mA, P_OUT = 150.0 W, F = 500 MHz
V_DD = 28.0 V, I_DQ = 400.0 mA, P_OUT = 150.0 W, F = 500 MHz
Units
BV_DSS
I_DSS
I_GSS
V_GS(TH)
G_M
C_ISS
C_OSS
C_RSS
G_P
η_D
VSWR-T
Min.
65
—
—
2.0
2.0
—
—
—
8
55
—
Max.
—
4.0
4.0
6.0
—
180
120
32
—
—
10:1**
1
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