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UF2810P_17 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
UF2810P
RF Power MOSFET Transistor
10W, 100-500 MHz, 28V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 Common source configuration
 Lower noise floor
 100 MHz to 500 MHz operation
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
1.4*
A
Power Dissipation
PD
26.9
W
Junction Temperature
Storage Temperature
Thermal Resistance
TJ
TSTG
θJC
200
-55 to +150
6.5
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
100
30.0-j150.0
300
15.0-j90.0
ZLOAD (Ω)
70.0+j110.0
55.0+j80.0
500
4.2-j46.0
48.0+j50.0
VDD=28V, IDQ=100 Ma, POUT =10.0 W
ZIN is the series equivalent input impedance of the device
from gate to gate.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
65
-
-
1.0
Gate-Source Leakage Current
IGSS
-
1.0
Gate Threshold Voltage
VGS(TH)
2.0
6.0
Forward Transconductance
GM
80
-
Input Capacitance
CISS
-
7
Output Capacitance
Reverse Capacitance
COSS
CRSS
-
5
-
2.4
Power Gain
Drain Efficiency
Load Mismatch Tolerance
GP
10
-
ŋD
50
-
VSWR-T - 20:1
*Per side
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
VGS = 0.0 V , IDS = 2.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 10.0 mA
VDS = 10.0 V , IDS 100.0 mA , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 100.0 mA, POUT = 50.0 W F =500 MHz
VDD = 28.0 V, IDQ = 100.0 mA, POUT = 50.0 W F =500 MHz
VDD = 28.0 V, IDQ = 100.0 mA, POUT = 50.0 W F =500 MHz
1
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