UF2810P_15 Datasheet, PDF (1/2 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

UF2810P
RF Power MOSFET Transistor
10W, 100-500 MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• Common source configuration
• Lower noise floor
• 100 MHz to 500 MHz operation
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V_DS
65
V
Gate-Source Voltage
V_GS
20
V
Drain-Source Current
I_DS
1.4*
A
Power Dissipation
P_D
26.9
W
Junction Temperature
T_J
200
°C
Storage Temperature
T_STG
-55 to +150
°C
Thermal Resistance
θ_JC
6.5
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
100
30.0-j150.0
Z_LOAD (Ω)
70.0+j110.0
300
15.0-j90.0
55.0+j80.0
500
4.2-j46.0
48.0+j50.0
V_DD=28V, I_DQ=100 Ma, P_OUT =10.0 W
Z_IN is the series equivalent input impedance of the device
from gate to gate.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV_DSS
I_DSS
65
-
-
1.0
Gate-Source Leakage Current
Gate Threshold Voltage
I_GSS
-
1.0
V_GS(TH)
2.0
6.0
Forward Transconductance
Input Capacitance
G_M
C_ISS
80
-
-
7
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
5
-
2.4
Power Gain
G_P
10
-
Drain Efficiency
Load Mismatch Tolerance
ŋ_D
50
-
VSWR-T - 20:1
*Per side
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 2.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 10.0 mA
V_DS = 10.0 V , I_DS 100.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 100.0 mA, P_OUT = 50.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 100.0 mA, P_OUT = 50.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 100.0 mA, P_OUT = 50.0 W F =500 MHz
1
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and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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