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UF28100V_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
UF28100V
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Rev. V1
Features
 N-channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than competitive devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
VDS
VGS
IDS
PD
TJ
TSTG
θJC
65
20
12*
250
200
-55 to +150
0.7
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
ZIN (Ω)
4.5-j6.0
ZLOAD (Ω)
14.5+j0.5
300
2.25-j1.75
7.5j1.0
500
1.5+j5.5
3.5+j3.5
VDD=28V, IDQ=600 Ma, POUT =100.0 W
ZIN is the series equivalent input impedance of the device
from gate to gate.
ZLOAD is the optimum series equivalent load impedance as
measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BVDSS
65
Drain-Source Leakage Current
IDSS
-
Gate-Source Leakage Current
IGSS
-
Gate Threshold Voltage
VGS(TH)
2.0
Forward Transconductance
GM
1.5
Input Capacitance
CISS
-
Output Capacitance
COSS
-
Reverse Capacitance
CRSS
-
Power Gain
GP
10
Drain Efficiency
ŋD
50
Return Loss
RL
10
Load Mismatch Tolerance
VSWR-T -
Max
-
3.0
3.0
6.0
-
135
90
24
-
-
-
30:1
*Per side
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
dB
-
Test Conditions
VGS = 0.0 V , IDS = 15.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 300.0 mA
VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
1
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