UF28100H_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

UF28100H
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Features
 N-channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than competitive devices
 RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V_DS
V_GS
I_DS
P_D
T_J
T_STG
θ_JC
Rating
65
20
12*
250
200
-55 to +150
0.7
Units
V
V
A
W
°C
°C
°C/W
PACKAGE OUTLINE
Rev. V1
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
Z_IN (Ω)
4.5-j6.0
Z_LOAD (Ω)
14.5+j0.5
300
2.25-j1.75
7.5j1.0
500
1.5+j5.5
3.5+j3.5
V_DD=28V, I_DQ=600 Ma, P_OUT =100.0 W
Z_IN is the series equivalent input impedance of the device from gate to gate.
Z_LOAD is the optimum series equivalent load impedance as measured from drain
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV_DSS
65
I_DSS
-
Gate-Source Leakage Current
I_GSS
-
Gate Threshold Voltage
V_GS(TH)
2.0
Forward Transconductance
G_M
1.5
Input Capacitance
C_ISS
-
Output Capacitance
Reverse Capacitance
C_OSS
-
C_RSS
-
Power Gain
G_P
10
Drain Efficiency
Return Loss
Load Mismatch Tolerance
ŋ_D
50
R_L
10
VSWR-T -
*Per side
Max
-
3.0
3.0
6.0
-
135
90
24
-
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
dB
-
Test Conditions
V_GS = 0.0 V , I_DS = 15.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 300.0 mA
V_DS = 10.0 V , I_DS 3000.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 600.0 mA, P_OUT = 100.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 600.0 mA, P_OUT = 100.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 600.0 mA, P_OUT = 100.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 600.0 mA, P_OUT = 100.0 W F =500 MHz
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