UF2805B Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz

UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
Features
• N-channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• Common source configuration
• Lower noise floor
• 100 MHz to 500 MHz operation
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
1.4
Power Dissipation
P_D
14.4
Junction Temperature
T_J
200
Storage Temperature
T_STG -55 to +150
Thermal Resistance
θ_JC
12.1
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
100
15.0-j8.0
35.0+j55.0
300
8.0-j43.0
29.0+j40.0
500
4.0-j29.0
28.0-j29.0
V_DD=28V, I_DQ=50 Ma, P_OUT=100.0 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
1.0
Gate-Source Leakage Current
I_GSS
-
1.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
80
-
Input Capacitance
C_ISS
-
7.0
Output Capacitance
C_OSS
-
5
Reverse Capacitance
C_RSS
-
2.4
Power Gain
G_P
10
-
Drain Efficiency
ŋ_D
50
-
Load Mismatch Tolerance
VSWR-T - 20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 2.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 10.0 mA
V_DS = 10.0 V , I_DS 1.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =500MHz
1
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