UF2805B-20 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
Features
 N-channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 Common source configuration
 Lower noise floor
 100 MHz to 500 MHz operation
Package Outline
Released; RoHS Compliant
20 Jan 11
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
1.4
Power Dissipation
P_D
14.4
Junction Temperature
T_J
200
Storage Temperature
T_STG -55 to +150
Thermal Resistance
θ_JC
12.1
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
Z_IN (Ω)
15.0-j80.0
Z_LOAD (Ω)
35.0+j55.0
300
8.0-j43.0
29.0+j40.0
500
4.0-j29.0
28.0+j29.0
V_DD=28V, I_DQ=50 mA, P_OUT=100.0 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
1.0
Gate-Source Leakage Current
I_GSS
-
1.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
80
-
Input Capacitance
C_ISS
-
7.0
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
5
-
2.4
Power Gain
G_P
10
-
Drain Efficiency
ŋ_D
50
-
Load Mismatch Tolerance
VSWR-T
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 2.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 10.0 mA
V_DS = 10.0 V , I_DS 1.0 mA , ∆ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =500 MHz
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =500MHz
1
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