SMS201 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Silicon Schottky Diode

SMS201
Silicon Schottky Diode
Features
 Small Footprint, only 50 x 30 mils.
 Simplest Broadband Detector as no DC bias
Required
 Very Low Barrier Height, Good Sensitivity,
-54 dBm, also Low Flick Noise
 Very Low Parasitic Package Inductance and Low
Package Capacitance
 RoHS* Compliant
Description
The SMS201 is a silicon Schottky diode in a molded
plastic DFN package. It is designed for a broadband
zero bias detector. It has a high cutoff frequency and
can be used beyond 26.5 GHz for power detection
up to 10 dBm.
Rev. V1
Case 0503 - Molded Plastic DFN Package
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Units Min.
Breakdown Voltage (V_B)
I_R = 100 µA
V
1
Forward Voltage (V_F)
I_F = 100 µA
mV
60
Total Capacitance (C_T)
V_R = 0 V, 6 - 8 GHz
pF
—
Video Resistance (R_V)
I_F = 50 mA
Ω
2000
Tangential Signal Sensitivity (T_SS)
NF -3 dB, 10 GHz
dBm
—
Voltage Sensitivity (y)
P_IN = -30 dBm, Video BW = 500 KHz, 10 GHz mV/mW —
Typ.
—
80
0.08
4000
-54
8000
Max.
—
120
0.10
8000
—
—
Absolute Maximum Ratings
Parameter
Absolute Maximum
Reverse DC Voltage
1V
Forward Current
Dissipated Power
Junction Temperature
20 mA
100 mW
(de-rated to 0 @ +175°C)
+175°C
Storage Temperature
Solder Temperature
-65°C to +150°C
+260°C
per JEDEC J-STD-20C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these (HBM) Class 0
devices.
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.}
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