SMGS11 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – GaAs Schottky Diode

SMGS11
GaAs Schottky Diode
Features
 Small Footprint, only 50 x 30 mils.
 Very Low Parasitic Package Inductance, Series
Resistance, and Low Package Capacitance
 RoHS* Compliant
Description
The SMGS11 is a GaAs Schottky diode in a molded
plastic DFN package. It is designed for broadband
detector and single diode mixer. It is in single
configuration. It has a high cutoff frequency and can
be used beyond 26.5 GHz.
Rev. V1
Case 0503 - Molded Plastic DFN Package
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Units Min.
Forward Voltage (V_F)
Total Capacitance (C_T)
Series Resistance (R_S)
I_R = 1 mA
V_R = 0 V, 1 MHz
V = 0 V, >4 GHz
I_F = 5 mA
V
620
pF
—
Ω
—
Video Resistance (R_V)
I_F = 40 µA
Ω
—
Tangential Signal Sensitivity (T_SS)
NF -3 dB, 10 GHz
dBm
—
Voltage Sensitivity (y)
P_IN = -30 dBm, Video BW = 500 KHz, 10 GHz mV/mW —
Typ.
—
0.10
0.08
—
1250
-57
8000
Max.
760
0.13
0.10
7
—
—
—
Absolute Maximum Ratings
Parameter
Absolute Maximum
Input Power
20 dBm
Reverse Voltage
5V
Forward Current
20 mA
Junction Temperature
+175°C
Storage Temperature
Solder Temperature
-65°C to +150°C
+260°C, peak for 5 sec,
per JEDEC J-STD-20C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these (HBM) Class 0
devices.
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.}
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DC-0014105