SMA11 Datasheet, PDF (1/2 Pages) First Components International – 1.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES

A11 / SMA11
Cascadable Amplifier
5 to 1000 MHz
Features
• LOW NOISE: 3.1 dB (TYP.)
• LOW VSWR: 1.3:1 (TYP.)
• FLAT BANDWIDTH: <±0.25 dB (TYP.)
Product Image
Description
The A11 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance and
high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. Both TO-8 and Surface Mount packages are
Hermetically sealed, and MIL-STD-883 environmental screening
is available.
Ordering Information
Part Number
A11
MAAM-008715-0SMA11
MAAM-008715-00CA11
Package
TO-8
Surface Mount
SMA Connectorized **
** The connectorized version is not RoHs compliant.
Rev. V2
Electrical Specifications: Z₀ = 50Ω, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
Units
MHz
dB
dB
dB
dB
dBm
dBm
Typical
25ºC
1-1100
14.7
±0.3
20
3.1
-2.0
+10
Guaranteed
0º to 50ºC -54º to +85ºC*
5-1000
5-1000
14.0
13.5
±1.0
±1.2
3.5
4.0
-3.0
-4.0
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+20 V
Continuous Input Power
+13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +15 V_DC
IP2
dBm
+10
Second Order Harmonic IP dBm
+15
VSWR Input / Output (max)
1.3:1 / 1.3:1 1.8:1 / 1.8:1
DC Current @ 15 Volts (max) mA
9
11
2.0:1 / 2.0:1
12
Parameter
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
Rating
45ºC/W
0.048 W
+2ºC
* Over temperature performance limits for part number CA11, guaranteed from 0^oC to +50^oC only.
1
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