PH2856-160_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Radar Pulsed Power Transistor

PH2856-160
Radar Pulsed Power Transistor
160W, 2.856 GHz, 12µs Pulse, 10% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
65
3.0
15.0
700
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 40mA
Collector-Emitter Leakage Current V_CE = 36V
Thermal Resistance
Vcc = 40V, Pout = 160W
Output Power
Vcc = 40V, Pout = 160W
Power Gain
Vcc = 40V, Pout = 160W
Collector Efficiency
Vcc = 40V, Pout = 160W
Input Return Loss
Load Mismatch Tolerance
Vcc = 40V, Pout = 160W
Vcc = 40V, Pout = 160W
Frequency
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
F = 2.856 GHz
Symbol Min
BV_CES
65
I_CES
-
R_TH(JC)
-
P_iN
-
G_P
7.5
_C
40
RL
-
VSWR-T
-
Max Units
-
V
7.5
mA
0.25 °C/W
28.5
W
-
dB
-
%
-6
dB
3:1
-
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support