PH2323-5 Datasheet, PDF (1/2 Pages) Tyco Electronics – CW Power Transistor, 5W ,2.3 GHz

PH2323-5
CW Power Transistor
5W, 2.3 GHz
Features
• NPN silicon microwave power transistor
• Common base configuration
• Class C operation
• Interdigitated geometry
• Diffused emitter ballasting resistors
• Gold metalization system
• Hermetic metal / ceramic package
Outline Drawing
M/A-COM Products
Released - Rev. 07.07
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V_CES
V_EBO
I_C
P_D
T_J
T_STG
θ_JC
60
3.0
0.8
25
200
-65 to + 200
7.0
Units
V
V
A
W
°C
°C
°C/W
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown Voltage
BV_CES
60
Collector-Emitter Leakage Current
I_CES
-
Input Power
P_IN
-
Power Gain
G_P
8
Collector Efficiency
ŋ_C
35
Input Return Loss
RL
6
Load Mismatch Tolerance
VSWR-T -
Max
-
2.0
0.79
-
-
-
3:1
Units
V
mA
w
dB
%
dB
-
Test Conditions
I_C = 10mA
V_CE = 28V
V_CE = 28V, Pout = 5.0 W, F =2.3 GHz
V_CE = 28V, Pout = 5.0 W, F =2.3 GHz
V_CE = 28V, Pout = 5.0 W, F =2.3 GHz
V_CE = 28V, Pout = 5.0 W, F =2.3 GHz
V_CE = 28V, Pout = 5.0 W, F =2.3 GHz
TEST FIXTURE IMPEDANCES
F (GHz)
2.30
Z_IN (Ω)
3.5-j17.0
Z_LOAD (Ω)
4.0+j0.3
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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