PH2323-1 Datasheet, PDF (1/2 Pages) Tyco Electronics – CW Power Transistor, 1W 2.3 GHz

PH2323-1
CW Power Transistor
1W, 2.3 GHz
Features
• NPN silicon microwave power transistor
• Common base configuration
• Class C operation
• Interdigitated geometry
• Diffused emitter ballasting resistors
• Gold metalization system
• Hermetic metal/Ceramic package
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Emitter Voltage
V_CES
60
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
0.2
Power Dissipation
P_D
7.0
Junction Temperature
T_J
200
Storage Temperature
T_STG
-65 to + 200
Thermal Resistance
θ_JC
25
Units
V
V
A
W
°C
°C
°C/W
Outline Drawing
M/A-COM Products
Released - Rev. 07.07
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol
Collector-Emitter Breakdown Voltage
BV_CES
Collector-Emitter Leakage Current
I_CES
Input Power
h_FE
Power Gain
G_P
Collector Efficiency
ŋ_C
Input Return Loss
RL
Load Mismatch Tolerance
VSWR
Min
60
-
-
8
30
6
-
Max
-
0.5
0.158
-
-
-
3:1
Units
V
mA
w
dB
%
dB
-
Test Conditions
I_C = 2.5mA
V_CE = 28V
V_CE = 28V, Pout = 1.0 W, F =2.3 GHz
V_CE = 28V, Pout = 1.0 W, F =2.3 GHz
V_CE = 28V, Pout = 1.0 W, F =2.3 GHz
V_CE = 28V, Pout = 1.0 W, F =2.3 GHz
V_CE = 28V, Pout = 1.0 W, F =2.3 GHz
TEST FIXTURE IMPEDANCES
F (GHz)
2.30
Z_IN (Ω)
12.5-j26.0
Z_LOAD (Ω)
3.7+j10.4
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1
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