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PH1920-45 Datasheet, PDF (1/2 Pages) Tyco Electronics – WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
PH1920-45
Wireless Bipolar Power Transistor
45W, 1930-1990 MHz
Features
• NPN silicon microwave power transistor
• Common emitter class AB operation
• Internal input and output impedance matching
• Diffused emitter ballasting
• Gold metallization system
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
θJC
20
65
3.0
5.5
100
200
-65 to + 150
1.3
Units
V
V
V
A
W
°C
°C
°C/W
Outline Drawing
M/A-COM Products
Released - Rev. 07.07
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Power Gain
GP
8
Collector Efficiency
ŋC
40
Input Return Loss
RL
10
Load Mismatch Tolerance
VSWR
-
Max
-
-
-
3:1
Units
dB
%
dB
-
Test Conditions
VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz
VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz
VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz
VCC = 25V, ICQ = 200 mA, Pout = 45 W, F =1930, 1990 MHz
BROADBAND TEST FIXTURE IMPEDANCES
F (GHz)
ZIN (Ω)
ZLOAD (Ω)
1930
2.8-j5.5
4.8-j1.1
1960
2.7-j5.4
5.0-j1.3
1990
2.6-j5.3
5.2-j1.5
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1
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and/or prototype measurements. Commitment to develop is not guaranteed.
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.