PH1920-33 Datasheet, PDF (1/2 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz

PH1920-33
Wireless Bipolar Power Transistor
33W, 1930-1900 MHz
Features
• NPN silicon microwave power transistor
• Common emitter class AB operation
• Internal input and output impedance matching
• Diffused emitter ballasting
• Gold metallization system
• RoHS Compliant
Outline Drawing
M/A-COM Products
Released - Rev. 08.07
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
V_CBO
25
Collector-Emitter Voltage
V_CES
65
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
4.7
Power Dissipation
P_D
91
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to + 150
Thermal Resistance
θ_JC
1.6
Units
V
V
V
A
W
°C
°C
°C/W
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Power Gain
G_P
7.0
Collector Efficiency
ŋ_C
40
Input Return Loss
RL
10
Load Mismatch Tolerance
VSWR
-
Max
-
-
-
2:1
Units
dB
%
dB
-
Test Conditions
VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz
VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz
VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz
VCC = 25V, ICQ = 200 mA, Pout = 33 W, F =1930, 1990 MHz
BROADBAND TEST FIXTURE IMPEDANCES
F (GHz)
1930
1960
1990
Z_IN (Ω)
2.6 - j2.6
2.5 - j2.5
2.4 - j2.3
Z_LOAD (Ω)
3.3 - j1.1
3.8 - j1.0
4.1 - j0.8
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1
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