PH1819-33 Datasheet, PDF (1/2 Pages) Tyco Electronics – WIRELESS POWER TRANSISTOR 33W

PH1819-33
Wireless Bipolar Power Transistor
33W, 1805-1880 MHz
Features
• NPN silicon microwave power transistor
• Common emitter Class AB operation
• Internal input and output impedance matching
• Diffused emitter ballasting
• Gold metallization system
• RoHS Compliant
Outline Drawing
M/A-COM Products
Released - Rev. 08.07
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
V_CBO
25
Collector-Emitter Voltage
V_CES
65
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
4.7
Power Dissipation
P_D
91
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to + 150
Thermal Resistance
θ_JC
3.0
Units
V
V
V
A
W
°C
°C
°C/W
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min Max Units
Test Conditions
Power Gain
G_P
7.0
-
dB V_CC = 25V, I_CQ = 200 mA, P_out = 33 W, F = 1805, 1880 MHz
Collector Efficiency
ŋ_C
40
-
%
V_CC = 25V, I_CQ = 200 mA, P_out = 33 W, F = 1805, 1880 MHz
Input Return Loss
RL
10
-
dB V_CC = 25V, I_CQ = 200 mA, P_out = 33 W, F = 1805, 1880 MHz
Load Mismatch Tolerance
VSWR
-
2:1
-
V_CC = 25V, I_CQ = 200 mA, P_out = 33 W, F = 1805, 1880 MHz
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (GHz)
1805
1850
1880
Z_IN (Ω)
1.8 - j5.5
1.6 - j5.1
1.7 - j4.8
Z_LOAD (Ω)
4.0 - j1.4
3.9 - j1.4
4.0 - j0.9
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
1
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
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