PH1819-15N Datasheet, PDF (1/3 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz

PH1819-15N
Wireless Bipolar Power Transistor
15W, 1.78-1.90 GHz
Features
• NPN silicon microwave power transistor
• Designed for linear amplifier applications
• Class AB: -34 dBc typ. 3rd IMD at 15 W PEP
• Class A: +48 dBm typ. 3rd order intercept point -
• Common emitter configuration
• Internal input impedance matching
• Diffused emitter ballasting
• Gold metallization system
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CES
60
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
2.0
Power Dissipation
P_D
58
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to + 150
Thermal Resistance
θ_JC
3.0
Units
V
V
V
A
W
°C
°C
°C/W
Outline Drawing
M/A-COM Products
Released - Rev. 07.07
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown Voltage
BV_CES
60
Collector-Emitter Leakage Current
I_CES
-
Collector-Emitter Breakdown Voltage
BV_CEO
24
Emitter-Base Breakdown Voltage
BV_EBO
3.0
DC Forward Current Gain
h_FE
15
Power Gain
G_P
7.0
Collector Efficiency
ŋ_C
25
Input Return Loss
RL
10
Load Mismatch Tolerance
VSWR
-
3rd Order IMD
IMD₃
-
Max
-
1.0
-
-
120
-
-
-
10:1
-30
Units
V
mA
V
V
-
dB
%
dB
-
dBc
Test Conditions
I_C = 10mA
V_CE = 24V
I_C = 10mA
I_B = 10mA
V_CE = 5V, I_C = 0.5 mA
VCC = 26V, ICQ = 25 mA, Pout = 15 W PEP, F =1880 GHz, Δ F=100kHz
VCC = 26V, ICQ = 25 mA, Pout = 15 W PEP, F =1880 GHz, Δ F=100kHz
VCC = 26V, ICQ = 25 mA, Pout = 15 W PEP, F =1880 GHz, Δ F=100kHz
VCC = 26V, ICQ = 25 mA, Pout = 15 W PEP, F =1880 GHz, Δ F=100kHz
VCC = 26V, ICQ = 25 mA, Pout = 15 W PEP, F =1880 GHz, Δ F=100kHz
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (MHz)
1780
1850
1880
1880
1900
Z_IN (Ω)
10.5+j12.3
11.4+j11
11.9+j6.2
9.9+j3.6
8.8+j1.9
Z_LOAD (Ω)
1.6-j1.9
1.6-j2.2
1.6-j.2.5
1.6-j2.7
1.4-j2.7
INPUT
NETWORK
Z_IN
Z_LOAD
OUTPUT
NETWORK
1
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and/or prototype measurements. Commitment to develop is not guaranteed.
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