PH1617-60 Datasheet, PDF (1/3 Pages) Tyco Electronics – Wireless Power Transistor 60 Watts, 1615 - 1685 MHz

PH1617-60
Wireless Power Transistor
60W, 1615-1685 MHz
Features
• NPN Silicon microwave power transistor
• Common emitter configuration
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• RoHS Compliant
• -28dBc typical IMD at 60 W PEP
Package Outline
M/A-COM Products
Released, 05 Sep 07
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol Rating
Collector-Emitter Voltage
V_CEO
20
Collector-Emitter Voltage
V_CES
60
Emitter-Base Voltage
V_ebo
3.0
Collector Current
Ic
5.8
Power Dissipation
P_D
150
Storage Temperature
TSTG -50 to +150
Junction Temperature
T_J
200
Thermal Resistance
θ_JC
1.0
Units
V
V
V
A
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
DC Forward Current Gain
hfe
15
Collector-Emitter Breakdown
Voltage
V_CES
60
Collector-Emitter Leakage
Current
I_CES
-
Power Gain
G_P
10.0
Collector Efficiency
Input Return Loss
η_C
40
RL
-
Load Mismatch Tolerance
VSWR-T
-
Max
120
-
4.0
-
-
-10
2:1
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
Z IF (Ω)
Z OF (Ω)
1600
1.5 – j3.6
2.9 – j1.7
1650
1.4 – j3.1
2.9 – j1.1
1700
1.5 – j2.9
3.0 – j0.5
Units
-
V
mA
dB
%
dB
-
Test Conditions
V_CE =5V, I_C = 2A
I_C = 60mA
V_CE =25V, I_E = 0A
V_CC=25 V, I_CQ=200 mA, P_OUT=60 W, F=1615, 1685MHz
V_CC=25 V, I_CQ=200 mA, P_OUT=60 W, F=1615, 1685MHz
V_CC=25 V, I_CQ=200 mA, P_OUT=60 W, F=1615, 1685MHz
V_CC=25 V, I_CQ=200 mA, P_OUT=60 W, F=1615, 1685MHz
1
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