PH1617-30 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz

PH1617-30
Wireless Bipolar Power Transistor
30W, 16 -1.7 GHz
Features
• Designed for linear amplifier applications
• -30 dBc typ. 3rd IMD at 30 W PEP
• Common emitter Class AB operation
• Internal input impedance matching
• Diffused emitter ballasting
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CES
60
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
10
Power Dissipation
P_D
109
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to + 150
Thermal Resistance
θ_JC
1.6
Units
V
V
V
A
W
°C
°C
°C/W
Outline Drawing
M/A-COM Products
Released - Rev. 07.07
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown Voltage
BV_CES
60
Collector-Emitter Leakage Current
I_CES
-
Collector-Base Breakdown Voltage
BV_CEO
20
Collector-Base Breakdown Voltage
BV_CER
30
Emitter-Base Breakdown Voltage
BV_EBO
3.0
DC Forward Current Gain
h_FE
15
Power Gain
G_P
10
Collector Efficiency
ŋ_C
40
Input Return Loss
RL
10
Load Mismatch Tolerance
VSWR-T -
3rd Order IMD
IMD₃
-
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (GHz)
1.60
1.65
1.70
Z_IN (Ω)
2.1+j4.9
3.1+j3.8
2.1+j3.5
Z_LOAD (Ω)
1.3-j0.7
1.2-j0.8
1.2-j0.9
Max
-
4.0
-
-
120
-
-
-
3.0:1
-28
Units
V
mA
V
V
V
-
dB
%
dB
-
dBc
Test Conditions
I_C = 40 mA
V_CE = 25 V
I_C = 40 mA
I_C = 40 mA, R_BE=220 Ω
I_B = 40 mA
V_CE = 5 V, I_C = 2 A
VCC = 25V, ICQ = 200 mA, Pout = 30 W PEP, F =1.6, 1.65, 1.70 GHz
VCC = 25V, ICQ = 200 mA, Pout = 30 W PEP, F =1.6, 1.65, 1.70 GHz
VCC = 25V, ICQ = 200 mA, Pout = 30 W PEP, F =1.6, 1.65, 1.70 GHz
VCC = 25V, ICQ = 200 mA, Pout = 30 W PEP, F =1.6, 1.65, 1.70 GHz
VCC = 25V, ICQ = 020 mA, Pout = 30 W PEP F =1650 MHz, Δ F=100kHz
Z_LOAD
INPUT
NETWORK
OUTPUT
NETWORK
Z_IN
1
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