PH1516-10 Datasheet, PDF (1/4 Pages) Tyco Electronics – Wireless Bipolar Power Transistor, 10W 1.45 - 1.60 GHz

PH1516-10
Wireless Bipolar Power Transistor
10W, 1.45-1.60 GHz
Features
• Designed for cellular base station applications
• Class AB: -33 dBc typ. 3rd IMD at 10 W PEP
• Class A: +49 dBm typ. 3rd order intercept point
• Common emitter configuration
• Internal input impedance matching
• Diffused emitter ballasting
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CES
60
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
2.0
Total Power Dissipation
P_TOT
58
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to + 200
Thermal Resistance
θ_JC
3.0
Units
V
V
V
A
W
°C
°C
°C/W
Outline Drawing¹
M/A-COM Products
Released - Rev. 07.07
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown Voltage
BV_CES
60
Collector-Emitter Leakage Current
I_CES
-
Collector-Base Breakdown Voltage
BV_CEO
20
Collector-Base Breakdown Voltage
BV_CER
30
Emitter-Base Breakdown Voltage
BV_EBO
3.0
DC Forward Current Gain
h_FE
15
Power Gain
G_P
10
Collector Efficiency
ŋ_C
40
Input Return Loss
RL
10
Load Mismatch Tolerance
VSWR
-
3rd Order IMD
IMD₃
-
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (GHz)
1.50
1.55
1.60
Z_IN (Ω)
1.4+j4.8
2.0+j5.0
2.5+j4.9
Z_LOAD (Ω)
2.1-j0.3
2.0-j0.4
2.0-j0.5
Max
-
2.0
-
-
120
-
-
-
3.0:1
-30
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Units
V
mA
V
V
V
-
dB
%
dB
-
dBc
Test Conditions
I_C = 20mA
V_CE = 25V
I_C = 20mA
I_C = 20mA, R_BE=220 Ω
I_B = 20mA
V_CE = 5V, I_C = 1 A
VCC = 25V, ICQ = 100 mA, Pout = 10 W, F =1.50-1.60 GHz
VCC = 25V, ICQ = 100 mA, Pout = 10 W, F =1.50-1.60 GHz
VCC = 25V, ICQ = 100 mA, Pout = 10 W, F =1.50-1.60 GHz
VCC = 25V, ICQ = 100 mA, Pout = 10 W, F =1.50-1.60 GHz
VCC = 25V, ICQ = 100 mA, Pout = 10 W PEP F =1500 MHz, Δ F=100kHz
Z_LOAD
INPUT
NETWORK
OUTPUT
NETWORK
Z_IN
1
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and/or prototype measurements. Commitment to develop is not guaranteed.
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