PH1214-6M Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – RADAR PULSED POWER TRANSISTOR, 6W, 100us PULSE, 10% DUTY

PH1214-6M
Radar Pulsed Power Transistor
6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
M/A-COM Products
Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
65
3.0
1.5
30
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 12mA
Collector-Emitter Leakage Current V_CE = 40V
Thermal Resistance
Vcc = 28V, Pin = 1.2W
Output Power
Vcc = 28V, Pin = 1.2W
Power Gain
Vcc = 28V, Pin = 1.2W
Collector Efficiency
Vcc = 28V, Pin = 1.2W
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 28V, Pin = 1.2W
Vcc = 28V, Pin = 1.2W
Vcc = 28V, Pin = 1.2W
Frequency
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
Symbol Min
BV_CES
65
I_CES
-
R_TH(JC)
-
P_OUT
6.0
G_P
7.0
η_C
45
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
1.5
mA
5.8
°C/W
-
W
-
dB
-
%
-6
dB
3:1
-
1.5:1
-
1
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