PH1214-55EL_17 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – Radar Pulsed Power Transistor

PH1214-55EL
Radar Pulsed Power Transistor
55 W, 1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
58
3.0
7.0
220
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 120mA
Collector-Emitter Leakage Current
Thermal Resistance
V_CE = 28V
Vcc = 28V, Pin = 12W
Output Power
Vcc = 28V, Pin = 12W
Power Gain
Vcc = 28V, Pin = 12W
Collector Efficiency
Vcc = 28V, Pin = 12W
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 28V, Pin = 12W
Vcc = 28V, Pin = 12W
Vcc = 28V, Pin = 12W
Frequency
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
Symbol Min
BV_CES
58
I_CES
-
R_TH(JC)
-
P_OUT
55
G_P
6.6
_C
50
RL
-
VSWR-T
-
VSWR-S
-
Max
-
6.0
0.8
-
-
-
-10
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
1
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