PH1214-300M_17 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Radar Pulsed Power Transistor

PH1214-300M
Radar Pulsed Power Transistor
300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS compliant
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25 °C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
Rating
90
3.0
I_C
21.0
P_TOT
583
T_STG -65 to +200
T_j
200
Units
V
V
A
W
°C
°C
Outline Drawing
Rev. V1
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Collector-Emitter Breakdown Voltage I_C = 80mA
Collector-Emitter Leakage Current V_CE = 40V
Thermal Resistance
Vcc = 40V, Pin = 40W
F = 1.2, 1.3, 1.4 GHz
Output Power
Power Gain
Collector Efficiency
Vcc = 40V, Pin = 40W
Vcc = 40V, Pin = 40W
Vcc = 40V, Pin = 40W
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 40V, Pin = 40W
Vcc = 40V, Pin = 40W
Vcc = 40V, Pin = 40W
Vcc = 40V, Pin = 40W
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
Symbol Min
BV_CES
I_CES
R_TH(JC)
P_OUT
G_P
_C
RL
Droop
VSWR-T
VSWR-S
90
-
-
300
8.75
50
-
-
-
-
Max Units
-
V
10
mA
0.30 °C/W
-
W
-
dB
-
%
-10
dB
1.0
dB
2:1
-
1.5:1
-
1
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