PH1214-12M Datasheet, PDF (1/3 Pages) Tyco Electronics – Radar Pulsed Power Transistor - 12 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty

PH1214-12M
Radar Pulsed Power Transistor
12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
M/A-COM Products
Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
70
3.0
1.3
47
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 12.5mA
Collector-Emitter Leakage Current V_CE = 40V
Thermal Resistance
Vcc = 28V, Pout = 12W
Output Power
Vcc = 28V, Pout = 12W
Power Gain
Vcc = 28V, Pout = 12W
Collector Efficiency
Vcc = 28V, Pout = 12W
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 28V, Pout = 12W
Vcc = 28V, Pout = 12W
Vcc = 28V, Pout = 12W
Frequency
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
Symbol Min
BV_CES
60
I_CES
-
R_TH(JC)
-
P_IN
-
G_P
8.5
η_C
45
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
1.25
mA
3.7
°C/W
1.7
W
-
dB
-
%
-9
dB
3:1
-
1.5:1
-
1
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
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