PH1214-110M_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Radar Pulsed Power Transistor

PH1214-110M
Radar Pulsed Power Transistor
110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
70
3.0
10.5
350
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 100mA
Collector-Emitter Leakage Current V_CE = 40V
Thermal Resistance
Vcc = 40V, Pin = 20W
Output Power
Vcc = 40V, Pin = 20W
Power Gain
Collector Efficiency
Vcc = 40V, Pin = 20W
Vcc = 40V, Pin = 20W
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 40V, Pin = 20W
Vcc = 40V, Pin = 20W
Vcc = 40V, Pin = 20W
Frequency
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
Symbol Min
BV_CES
70
I_CES
-
R_TH(JC)
-
P_OUT
110
G_P
7.4
_C
50
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
5.5
mA
0.5
°C/W
-
W
-
dB
-
%
-9
dB
3:1
-
1.5:1
-
1
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