PH1090-550S_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Avionics Pulsed Power Transistor

PH1090-550S
Avionics Pulsed Power Transistor
550 W, 1090 MHz, 10 µs Pulse, 1% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS Compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
80
3.0
28
3.5
-65 to +200
200
Units
V
V
A
kW
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 250mA
Collector-Emitter Leakage Current V_CE = 50V
Thermal Resistance
Vcc = 50V, Pout = 550W
Input Power
Vcc = 50V, Pout = 550W
Power Gain
Vcc = 50V, Pout = 550W
Collector Efficiency
Vcc = 50V, Pout = 550W
Input Return Loss
Vcc = 50V, Pout = 550W
Load Mismatch Tolerance
Vcc = 50V, Pout = 550W
Load Mismatch Stability
Vcc = 50V, Pout = 550W
Frequency
F = 1090 MHz
F = 1090 MHz
F = 1090 MHz
F = 1090 MHz
F = 1090 MHz
F = 1090 MHz
F = 1090 MHz
Symbol Min
BV_CES
80
I_CES
-
R_TH(JC)
-
P_IN
-
G_P
7.4
_C
50
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
25
mA
0.05 °C/W
100
W
-
dB
-
%
-9
dB
10:1
-
1.5:1
-
1
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