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PH1090-15L_17 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Avionics Pulsed Power Transistor
PH1090-15L
Avionics Pulsed Power Transistor
15W, 1030-1090 MHz, 250µs Pulse, 10% Duty
Features
 NPN silicon microwave power transistors
 Common base configuration
 Broadband Class C operation
 High efficiency inter-digitized geometry
 Diffused emitter ballasting resistors
 Gold metallization system
 Internal input and output impedance matching
 Hermetic metal/ceramic package
 RoHS Compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
TSTG
TJ
Rating
60
3.0
1.0
58
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 12.5mA
Collector-Emitter Leakage Current VCE = 40V
Thermal Resistance
Vcc = 45V, Pout = 15W
Input Power
Power Gain
Collector Efficiency
Vcc = 45V, Pout = 15W
Vcc = 45V, Pout = 15W
Vcc = 45V, Pout = 15W
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 45V, Pout = 15W
Vcc = 45V, Pout = 15W
Vcc = 45V, Pout = 15W
Frequency
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
Symbol Min
BVCES
60
ICES
-
RTH(JC)
-
Pin
-
GP
9.0
C
40
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
2.5
mA
3.0
°C/W
1.9
W
-
dB
-
%
-8
dB
3:1
-
1.5:1
-
1
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