PH1090-15L_15 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Avionics Pulsed Power Transistor

PH1090-15L
Avionics Pulsed Power Transistor
15W, 1030-1090 MHz, 250µs Pulse, 10% Duty
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS Compliant
Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
V_CES
V_EBO
I_C
P_TOT
T_STG
T_J
Rating
60
3.0
1.0
58
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: T_C = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage I_C = 12.5mA
Collector-Emitter Leakage Current V_CE = 40V
Thermal Resistance
Vcc = 45V, Pout = 15W
Input Power
Vcc = 45V, Pout = 15W
Power Gain
Vcc = 45V, Pout = 15W
Collector Efficiency
Vcc = 45V, Pout = 15W
Input Return Loss
Vcc = 45V, Pout = 15W
Load Mismatch Tolerance
Vcc = 45V, Pout = 15W
Load Mismatch Stability
Vcc = 45V, Pout = 15W
Frequency
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
F = 1030, 1090 MHz
Symbol Min
BV_CES
60
I_CES
-
R_TH(JC)
-
P_in
-
G_P
9.0
η_C
40
RL
-
VSWR-T
-
VSWR-S
-
Max Units
-
V
2.5
mA
3.0
°C/W
1.9
W
-
dB
-
%
-8
dB
3:1
-
1.5:1
-
1
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changes to the product(s) or information contained herein without notice.