PH0810-35 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Wireless bipolar power transistor, 35W 850-960MHz

PH0810-35
Wireless Bipolar Power Transistor
35W, 850-960MHz, 24V
Features
• Designed for linear amplifier applications
• Class AB: -30 dBc typ. 3rd IMD at 15 W PEP
• Class AB: +53 dBc typ. 3rd order intercept point
• Common emitter configuration
• Internal input impedance matching
• Diffused emitter ballasting
Outline Drawing¹
M/A-COM Products
Released - Rev. 07.07
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol Rating
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CES
60
Emitter-Base Voltage
V_EBO
3.0
Collector Current
I_C
1.0
Total Power Dissipation
P_TOT
116
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to + 150
Thermal Resistance
θ_JC
1.5
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol Min
Collector-Emitter Breakdown Voltage
BV_CES
60
Collector-Emitter Leakage Current
I_CES
-
Collector-Emitter Breakdown Voltage
BV_CEO
24
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
BV_EBO
3.0
h_FE
15
G_p
10
Collector Efficiency
Input Return Loss
η_C
55
RL
10
Load Mismatch Tolerance
VSWR-T -
3rd Order IMD
IMD₃
-
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
800
1.0-j3.7
2.1 - j0.9
850
1.3 - j4.0
1.6 - j0.7
900
1.9 - j4.3
1.6 - j0.4
960
3.0 - j2.7
1.7 - j0.1
Units
V
V
V
A
W
°C
°C
°C/W
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Max
-
2.0
-
-
120
-
-
-
3.0:1
-30
Units
V
mA
V
V
-
dB
%
db
-
dBc
Test Conditions
I_C = 20mA
V_CE = 24.0V
I_C = 40mA
I_B = 20mA
V_CE = 5.0V, IC = 1.0 A
VCC = 24V, IcQ = 200 mA, Pout = 35 W, F =900MHz,ΔF=100kHz
VCC = 24V, IcQ = 200 mA, Pout = 35 W, F =900MHz,ΔF=100kHz
VCC = 24V, IcQ = 200 mA, Pout = 35 W, F =900MHz,ΔF=100kHz
VCC = 24V, IcQ = 200 mA, Pout = 35 W, F =900MHzΔ,F=100kHz
VCC = 24V, IcQ = 200 mA, Pout = 35 W, F =900MHzΔ,F=100kHz
1
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and/or prototype measurements. Commitment to develop is not guaranteed.
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