PA512 Datasheet, PDF (1/2 Pages) Tyco Electronics – Cascadable Amplifier 10 to 500 MHz

PA512 / SMPA512
Cascadable Amplifier
10 to 500 MHz
Features
• HIGH POWER OUTPUT: +27.5 dBm (TYP.)
• HIGH THIRD ORDER I.P.: +39 DBm (TYP.)
• MODERTE NOISE FIGURE: 5.2 dB (TYP.)
• GaAs FET AMPLIFIER
Description
The PA512 0.5 watt RF power amplifier is a discrete
hybrid design, which uses thin film manufacturing
processes for accurate performance and high reliability.
This 2 stage GaAs FET transistor design uses a feedback
loop for flat broadband performance. An active DC biasing
network insures temperature-stable performance.
MIL-STD-883 environmental screening is available.
Ordering Information
Part Number
PA512
SMPA512
CPA512
Package
TO-8
Surface Mount
SMA Connectorized
Product Image
Rev. V1
Electrical Specifications: Z₀ = 50Ω, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
Units
MHz
dB
dB
dB
dB
dBm
dBm
Typical
25ºC
10-700
18.0
±0.3
24
5.2
27.5
+33
Guaranteed
0º to 50ºC -54º to +85ºC*
10-500
10-500
16.0
15.0
±0.7
±1.0
6.0
6.5
26.0
25.5
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +150ºC
Case Temperature
+85ºC
DC Voltage
+17 V
Continuous Input Power
+17 dBm
Short Term Input power
(1 minute max.)
100 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+85ºC
Thermal Data: V_CC = +15 V_DC
IP2
dBm
+45
Parameter
Rating
Second Order Harmonic IP dBm
VSWR Input / Output (max)
DC Current @ 15 Volts (max) mA
+50
1.4:1 / 2.0:1 1.8:1 / 2.2:1
200
210
2.0:1 / 2.3:1
220
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
ºC/W
W
ºC
* Over temperature performance limits for part number CPA512, guaranteed from 0^oC to +50^oC only.
1
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