NPTB00025 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 25W RF Power Transistor

NPTB00025
Gallium Nitride 28V, 25W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 25W P_3dB CW narrowband power
• 10W P_3dB CW broadband power from 500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
Broadband
25 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): V_DS = 28V, I_DQ = 225mA, Frequency = 3000MHz, T_C = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB
P_1dB
G_SS
h
y
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
Small Signal Gain
Drain Efficiency at 3dB Gain Compression
Output mismatch stress, VSWR = 10:1, all phase
angles, P_OUT = P_SAT
22
25
-
W
18
21
-
W
12.5
13.5
-
dB
60
65
-
%
No Performance Degradation After Test
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
I_G
P_T
q_JC
T_STG
T_J
HBM
MM
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Max
Units
100
V
-10 to 3
V
40
mA
33
W
5.25
°C/W
-65 to 150
°C
200
°C
1A (>250V)
M1 (>50V)
NPTB00025
Page 1
NDS-006 Rev. 4, April 2013