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NPT2021-DC-2P2GHZ-50W Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT | |||
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NPT2021
Advanced
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
ï· Suitable for linear and saturated applications
ï· Tunable from DC-2.2 GHz
ï· 48V Operation
ï· Industry Standard Package
ï· High Drain Efficiency (>60%)
Applications
ï· Defense Communications
ï· Land Mobile Radio
ï· Avionics
ï· Wireless Infrastructure
ï· ISM Applications
ï· VHF/UHF/L-Band Radar
DC-2.2 GHz
50W
GaN HEMT
Product Description
The NPT2021 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 50W
(47 dBm) in an industry standard plastic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 300mA, TC= 25°C
Symbol Parameter
Min
Typ
Max
Units
GSS
PSAT
Small-signal Gain
Saturated Output Power
-
17
-
dB
-
47.5
-
dBm
ï¨SAT
Efficiency at Saturated Output Power
GP
Gain at POUT = 50W
ï¨
Drain Efficiency at POUT = 50W
-
60
-
%
-
15
-
dB
-
55
-
%
VDS
Drain Voltage
-
48
-
V
ï
Ruggedness: Output Mismatch, all phase angles
VSWR = TBD:1, No Device Damage
Advanced Datasheet
Page 1
Rev. 0.B, May 2013
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