NPT2020 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT

NPT2020
Preliminary
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
Built using the SIGANTIC^® process - A proprietary GaN-on-Silicon technology
Features
 Suitable for linear and saturated applications
 Tunable from DC-3.5 GHz
 48V Operation
 Industry Standard Package
 High Drain Efficiency (>60%)
Applications
 Defense Communications
 Land Mobile Radio
 Avionics
 Wireless Infrastructure
 ISM Applications
 VHF/UHF/L-Band/S-Band Radar
DC-3.5 GHz
50W
GaN HEMT
Product Description
The NPT2020 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This
device has been designed for linear and saturated operation with output power levels exceeding
50W (47 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 3.5 GHz): V_DS = 48V, I_DQ = 350mA, T_C= 25°C
Symbol Parameter
Min
Typ
Max
Units
G_SS
P_SAT
Small-signal Gain
Saturated Output Power
-
17
-
dB
-
48
-
dBm
_SAT
Efficiency at Saturated Output Power
G_P
Gain at P_OUT = 50W

Drain Efficiency at P_OUT = 50W
-
60
-
%
-
11
-
dB
-
52
-
%
V_DS
Drain Voltage

Ruggedness: Output Mismatch, all phase angles
-
48
-
V
VSWR = TBD:1, No Device Damage
Preliminary Datasheet
Page 1
NDS-037 Rev. 2, 072413