NPT2019 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 48V, 25W, DC-6 GHz HEMT

NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC^® process - A proprietary GaN-on-Silicon technology
Features
 Suitable for linear and pulsed applications
 Tunable from DC-6 GHz
 48V Operation
 Industry Standard Plastic Package
 High Drain Efficiency (>60%)
Applications
 Defense Communications
 Land Mobile Radio
 Avionics
 Wireless Infrastructure
 ISM Applications
 VHF/UHF/L/S-Band Radar
DC-6 GHz
25W
GaN HEMT
Product Description
The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with pulsed output power levels
to 25W (44 dBm) in an industry standard surface mount plastic package.
RF Specifications (Pulsed*, 2.5 GHz): V_DS = 48V, I_DQ = 150mA, T_C= 25°C
Symbol Parameter
Min
Typ
Max
Units
G_SS
P_SAT
Small-signal Gain
Saturated Output Power
-
16.2
-
dB
-
44.8
-
dBm
_SAT
Efficiency at Saturated Output Power
G_P
Gain at P_OUT = 25W*

Drain Efficiency at P_OUT = 25W*
-
60
-
%
-
16
-
dB
-
55
-
%
V_DS
Drain Voltage
-
48
-
V

Ruggedness: Output Mismatch, all phase angles
VSWR = TBD:1, No Device Damage
* Pulse Conditions: 100µS pulse width, 10% duty cycle
Preliminary Datasheet
Page 1
NDS-043 Rev. 2, 012414