NPT2010_15 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – DC-2.2 GHz HEMT

NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC^® process - A proprietary GaN-on-Silicon technology
Features
 Suitable for linear and saturated applications
 Tunable from DC-2.2 GHz
 48V Operation
 Industry Standard Package
 High Drain Efficiency (>60%)
Applications
 Defense Communications
 Land Mobile Radio
 Avionics
 Wireless Infrastructure
 ISM Applications
 VHF/UHF/L-Band Radar
DC-2.2 GHz
100W
GaN HEMT
Product Description
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 100W
(50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): V_DS = 48V, I_DQ = 600mA, T_C= 25°C
Symbol Parameter
Min
Typ
Max
Units
G_SS
Small-signal Gain
-
17
-
dB
P_SAT
Saturated Output Power
-
50.5
-
dBm
_SAT
Efficiency at Saturated Output Power
G_P
Gain at P_OUT = 95W

Drain Efficiency at P_OUT = 95W
-
64
-
%
13.5
15
-
dB
52.5
61
-
%
V_DS
Drain Voltage
-
48
-
V

Ruggedness: Output Mismatch, all phase angles
VSWR = 10:1, No Device Damage
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NDS-034 Rev. 1, 052413