NPT1015_15 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – DC-3.5 GHz HEMT

NPT1015
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
Built using the SIGANTIC^® process - A proprietary GaN-on-Silicon technology
Features
 Suitable for linear and saturated applications
 Tunable from DC-3.5 GHz
 28V Operation
 Industry Standard Package
 High Drain Efficiency (>55%)
 Rugged Design Passes 15:1 VSWR test
 Reliable with MTTF > 10⁶ at T_J = 200°C
Applications
 Defense Communications
 Land Mobile Radio
 Avionics
 Wireless Infrastructure
 ISM Applications
 VHF/UHF/L-Band Radar
DC-3.5 GHz
45W
GaN HEMT
Product Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 45W
(46.5 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product
has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand
extreme mismatch on the input and output with no device damage.
RF Specifications (CW, 2.5 GHz): V_DS = 28V, I_DQ = 400mA, T_C= 25°C
Symbol Parameter
Min
Typ
Max
Units
G_SS
Small-signal Gain
-
13.5
-
dB
P_SAT
Saturated Output Power
-
47.3
-
dBm
_SAT
Efficiency at Saturated Output Power
G_P
Gain at P_OUT = 45W

Drain Efficiency at P_OUT = 45W
-
57
-
%
10.5
12
-
dB
47
54
-
%
V_DS
Drain Voltage
-
28
-
V

Ruggedness: Output Mismatch, All Phase Angles
VSWR = 15:1, No Device Damage
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NDS-035 Rev. 2, 121213