NPT1004_15 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – 45W RF Power Transistor

NPT1004
Gallium Nitride 28V, 45W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for pulsed, WiMAX, W-CDMA, LTE,
and other light thermal load applications from
DC to 4.0GHz
• 2500MHz performance
• 45W P3dB CW power
• 13.5 dB small signal gain
• 55% efficiency at P3dB
• 100% RF tested
• Low cost, surface mount SOIC package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 Export Control
DC - 4000MHz
45 Watt, 28 Volt
GaN HEMT
RF Specifications (2-Tone): V_DS = 28V, I_DQ = 400mA,Frequency = 2500MHz, Tone Spacing = 1MHz, T_C = 25°C,
Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB
Average Output Power at 3dB Compression
35
45
P_1dB
Average Output Power at 1dB Compression
-
28
G_SS
Small Signal Gain
12.5
13.5
h
Drain Efficiency at 3dB Gain Compression
50
55
-
W
-
W
-
dB
-
%
Typical OFDM Performance (2500-2700MHz): V_DS = 28V, I_DQ = 350mA, P_OUT,AVG = 37dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probabil-
ity on CCDF.T_C = 25°C.Measured in Load Pull System (Refer to Table 2 and Figure 1)
Symbol
EVM
G_P
h
Parameter
Error Vector Magnitude
Power Gain
Drain Efficiency
Typ
2.0
13.0
27
Units
%
dB
%
Typical OFDM Performance (3300-3500MHz): V_DS = 28V, I_DQ = 350mA, P_OUT,AVG = 36.5dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01%
probability on CCDF.T_C = 25°C.Measured in Load Pull System (Refer to Table 2 and Figure 1)
Symbol
EVM
G_P
h
Parameter
Error Vector Magnitude
Power Gain
Drain Efficiency
Typ
2.0
10.5
25
Units
%
dB
%
NPT1004
Page 1
NDS-010 Rev. 4, April 2013