|
NPA1003 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier | |||
|
NPA1003
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
ï· Broadband operation from 20-1500 MHz
ï· 28V Operation
ï· Input and output matched to 50 ohms
ï· Industry Standard QFN Plastic Package
ï· High Drain Efficiency (>50%)
Applications
ï· Broadband General Purpose
ï· Defense Communications
ï· Land Mobile Radio
ï· Wireless Infrastructure
ï· VHF/UHF/L-Band Radar
20-1500 MHz
5W
GaN MMIC PA
Product Description
The NPA1003 is a wideband, internally-matched, GaN MMIC power amplifier optimized for 20-
1500 MHz operation. This device has been designed for CW, pulsed, and linear operation with
output power levels exceeding 5W (37 dBm) in an industry standard, surface mount, QFN4X4-16
plastic package.
RF Specifications (CW, 1000 MHz): VDS = 28V, IDQ = 100mA, TC= 25°C
Symbol Parameter
Min
GSS
Small-signal Gain
-
PSAT
Saturated Output Power
-
ï¨SAT
Efficiency at Saturated Output Power
-
NF
Noise Figure
-
GP
Gain at POUT = 5W
14
PAE
Power Added Efficiency at POUT = 5W
38
VDS
Drain Voltage
-
ï
Ruggedness: Output Mismatch, all phase angles
Typ
Max
18
-
Units
dB
38.5
-
dBm
50
-
%
2.0
-
dB
16
-
dB
42
-
%
28
-
V
VSWR = 10:1, No Device Damage
Page 1
NDS-030 Rev. 4, 011414
|
▷ |