MZB600 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Zero Bias Detector Diode

MZB600
Zero Bias Detector Diode
Features
 Very Low Forward Voltage: 300 mV max. @ 1 mA
 Low Tangential Signal Sensitivity: -42 dBm
 Low Junction Capacitance: 0.2 pF
 High Breakdown Voltage: 3 V
 Available in Beam Lead, Multi-Junction Chip or
Packaged
 RoHS* Compliant
Description
The MZB600 zero bias detector (ZBD) diode is a
sensitive, very low barrier height Schottky diode
designed for use in high frequency, low input power
detectors. Its very low barrier height results in
excellent sensitivity to very small signals without the
need for external bias current. This diode is available
as a five-junction common-anode chip, as a single-
junction beam lead or packaged in one of several
suitable packages. It is manufactured using a proven
diode fabrication process which optimizes diode
characteristics for optimal electrical performance and
excellent reliability.
The low junction capacitance (0.2 pF typical) enables
the device to be used in sensitive detector circuits
with input signals up to 20 GHz.
This rugged device is capable of reliable operation in
all military, commercial and industrial applications.
Rev. V1
Ordering Information¹
Part Number
MZB600-C15P-W
MZB600-B11-GP
MZB600-19-6-W
MZB600-19-6-R
MZB600-32-W
Package
chip (400 pc. waffle pack)
beam lead (100 pc. GelPak™)
CS19-6 (100 pc. waffle pack)
CS19-6 (3000 pc. Reel)
CS32 (100 pc. waffle pack)
1. Contact the factory for other packaging options.
Electrical Specifications: T_A = +25°C
Parameter
Test Conditions
Breakdown Voltage (V_B)
I_R = 100 µA
Forward Voltage (V_F)
I_F = 1 mA
Video Resistance (R_V)
I_F = 75 mA, 1 GHz
Junction Capacitance (C_J)
V_R = 0 V, 1 MHz
Unit
Min.
V
3
mV
—
Ω
—
pF
—
Typ.
—
—
3500
0.2
Max.
—
300
—
—
1
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DC-0014119