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MSWSSB-020-30 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – PIN Diode Shunt Switch Element
MSWSSB-020-30
PIN Diode Shunt Switch Element
Features
 Supports up to 20 watt
 Low Insertion Loss 0.3 dB @ 2.7 GHz
 Low Insertion Loss 0.4 dB @ 10.0 GHz
 High Isolation 55 dB @ 2.7 GHz
 High Isolation 33 dB @ 10.0 GHz
 RoHS* Compliant
Description
A broadband, high linearity medium power series
shunt switch element in a plastic 1.9 x 1.1 mm DFN
package.
This device is designed for wireless
telecommunication infrastructure and test instrument
applications. It is also suited for other applications in
0.1 ~ 10 GHz.
Rev. V1
Electrical Specifications: TA = +25°C
Parameter
Test Conditions
Breakdown Voltage
Junction Capacitance
Series Resistance
Lifetime
Insertion Loss
Input Return Loss
Output Return Loss
Isolation
IR = 10 mA
VR = 50 V, F = 1 MHz
Shunt
Series
IF = 100 mA, F = 500 MHz
Shunt
Series
IF = 10 mA, IR = 6 mA , 10%/90%
Shunt
Series
I = -50 mA1
F = 2.3 ~ 2.7 GHz
F = <10 GHz
I = -50 mA1
F = 2.3 ~ 2.7 GHz
F = <10 GHz
I = -50 mA1
F = 2.3 ~ 2.7 GHz
F = <10 GHz
I = -50 mA1
F = 2.3 ~ 2.7 GHz
F = <10 GHz
1. Positive current is defined as current going into pin 2.
Min.
200
—
—
—
—
20
15
20
15
45
28
Typ.
—
0.26
0.048
0.40
0.98
4300
150
0.3
0.6
25
20
25
18
55
35
Max.
—
Units
V
—
pF
—
Ohms
8000
ns
250
0.5
dB
0.8
—
dB
—
dB
—
dB
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support