MSWSHC-040-40 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – PIN Diode Shunt Switch Element

MSWSHC-040-40
PIN Diode Shunt Switch Element
Features
 Supports up to 40 W Power
 Low Insertion Loss:
0.2 dB @ 2.7 GHz
0.4 dB @ 8.0 GHz
 High Isolation:
55 dB to 2.7 GHz
 RoHS* Compliant
Description
A broadband, high linearity, medium power shunt
switch element in a 2.6 x 1.5 mm DFN package.
This PIN diode switch element is designed for
wireless telecommunications infrastructure and test
instrument applications. It is also suited for other
applications in 0.05 ~ 10 GHz.
Rev. V1
(2615)
Molded Plastic DFN
Electrical Specifications: T_A = +25°C
Parameter
Breakdown Voltage (V_B)
Insertion Loss (I_L)
Isolation (I_SO)
Input / Output Return Loss (R_L)
Minority Carrier Lifetime (T_L)
Test Conditions
I_R = 10 µA
V_R = 50 V
2.3 - 2.7 GHz
<6.0 GHz
V_R = -10 V
2.3 - 2.7 GHz
<6.0 GHz
I_F = 100 mA
2.3 - 2.7 GHz
<6.0 GHz
I_F = 10 mA, I_R = 6 mA, @ 50%
Units
V
Min.
300
dB
—
dB
50
35
dB
20
14
ns
—
Typ.
—
0.20
0.40
55
40
25
16
3000
Max.
—
0.30
0.50
—
—
—
Absolute Maximum Ratings
Parameter
Breakdown Voltage
Forward Current
Thermal Resistance
Junction Temperature
Storage Temperature
Assembly Temperature
Absolute Maximum
300 V
200 mA
9°C/W
+175°C
-65°C to +150°C
+260°C, Per JEDEC STD-J-20C
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.}
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DC-0014078